发明名称 光罩之制造方法及光罩基板;METHOD OF MANUFACTURING A PHOTOMASK AND PHOTOMASK SUBSTRATE
摘要 本发明获得一种可形成尺寸精度较高之转印用图案之光罩之制造方法。;本发明之光罩之制造方法具有:准备附光阻剂之光罩基板之步骤,该附光阻剂之光罩基板系于透明基板上积层光学膜、反射性薄膜、及光阻膜而成;光阻图案形成步骤;薄膜蚀刻步骤,其形成反射性薄膜图案;去除上述光阻图案之步骤;尺寸测定步骤,其测定上述反射性薄膜图案之尺寸;光学膜蚀刻步骤,其基于根据所测定之上述尺寸而决定之上述光学膜之蚀刻时间,以上述反射性薄膜图案为掩膜,进行上述光学膜之湿式蚀刻;及去除上述反射性薄膜之步骤;且于上述尺寸测定步骤中,藉由对上述反射性薄膜图案之测定部照射检查光,并检测上述检查光之反射光,而进行上述尺寸测定。;[Solution] A method of manufacturing a photomask includes a step of preparing a resist-coated photomask substrate obtained by stacking, on a transparent substrate, an optical film, a reflective thin film, and a resist film; a resist pattern forming step of forming a resist pattern; a thin film etching step of forming a reflective thin film pattern; a step of removing the resist pattern; a dimension measuring step of measuring a dimension of the reflective thin film pattern; an optical film etching step of wet-etching the optical film, with the reflective thin film pattern used as a mask, in accordance with an etching time of the optical film that is determined on the basis of the measured dimension; and a step of removing the reflective thin film. In the dimension measuring step, a measured part of the reflective thin film pattern is irradiated with an inspection light and a reflected light of the inspection light is detected. Thus, the dimension measurement is carried out.
申请公布号 TW201543142 申请公布日期 2015.11.16
申请号 TW104109043 申请日期 2015.03.20
申请人 HOYA股份有限公司 HOYA CORPORATION 发明人 梅田佳宏 UMEDA, YOSHIHIRO
分类号 G03F1/68(2012.01);G03F1/80(2012.01);G03F1/84(2012.01) 主分类号 G03F1/68(2012.01)
代理机构 代理人 陈长文
主权项
地址 日本 JP
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