晶粒接合薄膜、切割晶粒接合薄膜及层合薄膜,申请号TW104110056-传众专利搜索

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发明名称	晶粒接合薄膜、切割晶粒接合薄膜及层合薄膜
摘要	本发明系提供可于不牺牲半导体装置的情况下非破坏地观察空隙之晶粒接合薄膜等。一种关于晶粒接合薄膜，其雾度为0%~25%。
申请公布号	TW201542756	申请公布日期	2015.11.16
申请号	TW104110056	申请日期	2015.03.27
申请人	日东电工股份有限公司 NITTO DENKO CORPORATION	发明人	木村雄大 KIMURA, YUTA;三隅贞仁 MISUMI, SADAHITO;村田修平 MURATA, SHUHEI;大西谦司 ONISHI, KENJI;宍户雄一郎 SHISHIDO, YUICHIRO
分类号	C09J7/02(2006.01);H01L21/66(2006.01);H01L21/67(2006.01);H01L21/302(2006.01)	主分类号	C09J7/02(2006.01)
代理机构		代理人	林志刚
主权项
地址	日本 JP

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