SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device and a manufacturing method of the same, which can reduce contact resistance between a silicon carbide substrate and an electrode while increasing an integration degree of a semiconductor element.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises a process of removing a portion of a buffer layer 17 on a third impurity region 14 and part of the third impurity region 14 in an atmosphere containing at least either of aluminum or boron to form a recess 8 formed by a side part 8a linked to a principal surface 10a and a bottom 8b linked to the side part 8a. The process of forming the recess 8 includes a process of connecting the bottom 8b of the recess 8 and a second impurity region 13 to form a fourth impurity region 18 having an impurity concentration higher than that of the second impurity region 13. The silicon carbide semiconductor device manufacturing method further comprises a process of forming an electrode 16 which contains aluminum and contacts the fourth impurity region 18 at the bottom 8b and contacts the third impurity region 14 at the side part 18a and does not contact the third impurity region 14 at the principal surface 10a.