| 摘要 |
揭露一种于多孔介电材料中形成互连的技术。依据若干实施例，藉由以牺牲孔填充材料填充其孔，诸如氮化钛(TiN)、二氧化钛(TiO2)、或相较于互连之金属化及介电材料具有高蚀刻选择性之其他适当牺牲材料，主介电层之多孔可暂时减少。在填充介电层内形成互连之后，可从主介电层之孔移除牺牲孔填充材料。在若干状况下，可以对于主介电层之介电常数(κ值)、泄漏性能、及/或依时介电击穿(TDDB)属性最小或可忽略影响实施移除及固化。可利用若干实施例，例如在包含高度多孔超低κ(ULK)介电材料之基于原子层沉积(ALD)及/或基于化学气相沉积(CVD)后端金属化之程序中。 Techniques are disclosed for forming interconnects in porous dielectric materials. In accordance with some embodiments, the porosity of a host dielectric layer may be reduced temporarily by stuffing its pores with a sacrificial pore-stuffing material, such as titanium nitride (TiN), titanium dioxide (TiO2), or other suitable sacrificial material having a high etch selectivity compared to the metallization and dielectric material of the interconnect. After interconnect formation within the stuffed dielectric layer, the sacrificial pore-stuffing material can be removed from the pores of the host dielectric. In some cases, removal and curing can be performed with minimal or otherwise negligible effect on the dielectric constant (κ-value), leakage performance, and/or time-dependent dielectric breakdown (TDDB) properties of the host dielectric layer. Some embodiments can be utilized, for example, in processes involving atomic layer deposition (ALD)-based and/or chemical vapor deposition (CVD)-based backend metallization of highly porous, ultra-low-κ |
