SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a technique capable of improving barrier height between an electrode layer and a semiconductor layer.SOLUTION: A method for manufacturing a semiconductor device comprises a step of forming a first electrode layer which forms Schottky junction with at least part of a semiconductor layer and mainly being formed of nickel; a step of performing heat treatment after formation of the first electrode layer; and a step of forming a second electrode layer mainly formed of at least one metal selected from palladium, platinum and iridium, on the first electrode layer after the heat treatment.