| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon-carbide Schottky barrier diode which operates with a high breakdown voltage even if a relatively thin epitaxial film is used.SOLUTION: In a horizontal type silicon-carbide Schottky barrier diode, a plurality of conductive regions and non-conductive regions are respectively provided in a contact plane between a Schottky metal layer 4 and a homoepitaxial layer 1. A plurality of conductive regions and non-conductive regions are also respectively provided between a cathode 8 and the homoepitaxial layer 1. When an anode 7 and the cathode 8 are connected by a virtual straight line, areas of the conductive regions in the anode 7 and areas of the conductive regions in the cathode 8 are enlarged step by step, respectively, in a direction away from a midpoint between the anode 7 and the cathode 8. |
