EPITAXIAL WAFER MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial wafer manufacturing method which has considerably less metallic contamination and less defect in an epitaxial film than ever before and minimizes a decrease in growth rate.SOLUTION: A manufacturing method of a vapor-phase grown epitaxial wafer on a substrate at a substrate temperature within a range from 800°C to 900°C in a single wafer gas-phase reaction apparatus which applies heat to a horizontally-holding single substrate while rotating the substrate and supplies a mixed gas to a surface of the substrate to vapor-phase grow an epitaxial layer on the substrate surface, comprises a step of achieving vapor-phase growth under a condition which satisfies P<200 and D≤32×Pwhen assuming that pressure in a chamber of the single wafer gas-phase reaction apparatus is less than 200 Torr, and a monosilane concentration in the mixed gas at atmospheric pressure of 1 and at 20°C is D[×10mol/l] and pressure is P[Torr].