| 摘要 |
Embodiments of the present invention generally relates to a method of forming silicone epitaxial layers on semiconductor devices. The methods comprises: a step of heating a substrate arranged in a treating volume of a treatment chamber; and a step of performing a depositing process to form a silicone epitaxial layer on the substrate by exposing the substrate to a catalytic gas containing halogen molecules, and one or more deposition gas including a silicone source and a dopant source. In the embodiment, the catalytic gas includes a chlorine gas. |
