| 摘要 |
A modification effect is given to a substrate by plasma with low costs. A substrate processing apparatus according to the present invention includes a loading stand which has a substrate loading region which loads a substrate and is rotationally installed around an axial line X, a processing container which partitions and forms a processing chamber including a first region and a second region, a precursor gas supply unit which supplies a precursor gas to the first region, a process gas supply unit which supplies a first gas or a second gas to the second region, at least one plasma generating unit which generates the plasma of the first or second gas in the second region, and a control unit which performs a repetitive control to repeat a first operation to supply the first gas to the second region for a first time and a second operation to supply a second gas to the second region for a second time. |
