发明名称 |
SEALING FILM FORMING METHOD AND SEALING FILM FORMING APPARATUS |
摘要 |
The present invention provides a method for forming a sealing film on an object such as an organic light emitting device at a low temperature by using a raw material excluding hydrogen or halogen atoms. A sealing film manufacturing apparatus (100) includes: a processing container (1); a stage (3) arranging a target to be processed which is a chain substrate (S); and a plasma source (5) generating nitrogen-containing (N_2) plasma in the processing container (1). The processing container (1) is divided into at least two spaces (S1, S2). The first space (S1) is a plasma generating unit which receives inert and nitrogen gases to generate the nitrogen-containing plasma (P). Also, the second place (2) is a reaction unit which decomposes silicon compounds not containing the hydrogen atoms in the molecules by the nitrogen-containing plasma (P) generated in the first space (S1) and deposits a silicon nitride film used as the sealing film by a chemical vapor deposition (CVD) method. |
申请公布号 |
KR20150126774(A) |
申请公布日期 |
2015.11.13 |
申请号 |
KR20150055112 |
申请日期 |
2015.04.20 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HAYASHI TERUYUKI;ISHIKAWA HIRAKU |
分类号 |
H01L51/52;H01L21/02;H01L21/318;H01L51/56 |
主分类号 |
H01L51/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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