Semiconductor Device and Method of Embedding TSV Semiconductor Die Within Substrate for Vertical Interconnect in POP

摘要

A semiconductor device has a substrate with a first conductive layer over a surface of the substrate and a plurality of cavities exposing the first conductive layer. A first semiconductor die having conductive TSV is mounted into the cavities of the substrate. A first insulating layer is formed over the substrate and first semiconductor die and extends into the cavities to embed the first semiconductor die within the substrate. A portion of the first insulating layer is removed to expose the conductive TSV. A second conductive layer is formed over the conductive TSV. A portion of the first conductive layer is removed to form electrically common or electrically isolated conductive segments of the first conductive layer. A second insulating layer is formed over the substrate and conductive segments of the first conductive layer. A second semiconductor die is mounted over the substrate electrically connected to the second conductive layer.

主权项

1. A semiconductor device, comprising:
a first semiconductor die including a conductive via; an insulating material disposed in a peripheral region of the first semiconductor die; an insulating layer disposed over the first semiconductor die and insulating material including a first opening in the insulating layer formed over the conductive via; a first conductive layer disposed over the insulating layer and first semiconductor die including a cavity in the first conductive layer formed in the first opening; and a first interconnect structure formed over the conductive via opposite the first conductive layer.