| 发明名称 |
INTERCONNECT STRUCTURE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A method for manufacturing a semiconductor comprises: providing a substrate; forming an opening in a dielectric layer disposed over the substrate; providing a target with a first type atoms; ionizing the first type atoms provided from the target; providing a bias to the substrate for controlling the moving paths of the ionized first type atoms thereby directing the ionized first type atoms in the opening; and forming a first conductive structure from bottom of the opening with the ionized first type atoms under a pre-determined frequency and a pre-determined pressure. |
| 申请公布号 |
US2015325522(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
US201414271726 |
申请日期 |
2014.05.07 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
YEH CHING-FU;LEE MING-HAN |
| 分类号 |
H01L23/532;H01L21/3213;H01L21/321;H01L21/768;H01L23/528 |
主分类号 |
H01L23/532 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
providing a substrate; forming an opening in a dielectric layer disposed over the substrate; providing a target with a first type atoms; ionizing the first type atoms provided from the target; providing a bias to the substrate for controlling the moving paths of the ionized first type atoms thereby directing the ionized first type atoms in the opening; and forming a first conductive structure from bottom of the opening with the ionized first type atoms under a pre-determined frequency and a pre-determined pressure. |
| 地址 |
Hsinchu TW |
