DIELECTRIC-BASED MEMORY CELLS HAVING MULTI-LEVEL ONE-TIME PROGRAMMABLE AND BI-LEVEL REWRITEABLE OPERATING MODES AND METHODS OF FORMING THE SAME

摘要

A method of programming a memory cell is provided. The memory cell includes a memory element having a first conductive material layer, a first dielectric material layer above the first conductive material layer, a second conductive material layer above the first dielectric material layer, a second dielectric material layer above the second conductive material layer, and a third conductive material layer above the second dielectric material layer. One or both of the first and second conductive material layers comprises a stack of a metal material layer and a highly doped semiconductor material layer. The memory cell has a first memory state upon fabrication corresponding to a first read current. The method includes applying a first programming pulse to the memory cell with a first current limit. The first programming pulse programs the memory cell to a second memory state that corresponds to a second read current greater than the first read current.

主权项

1. A method of programming a memory cell comprising a memory element comprising a first conductive material layer, a first dielectric material layer disposed above the first conductive material layer, a second conductive material layer disposed above the first dielectric material layer, a second dielectric material layer disposed above the second conductive material layer, and a third conductive material layer disposed above the second dielectric material layer, wherein one or both of the first conductive material layer and the second conductive material layer comprises a stack of a metal material layer and a highly doped semiconductor material layer, wherein the memory cell has a first memory state upon fabrication corresponding to a first read current, wherein the method comprises:
applying a first programming pulse to the memory cell with a first current limit, wherein the first programming pulse programs the memory cell to a second memory state that corresponds to a second read current greater than the first read current.