| 摘要 |
The present invention provides, in the preparation of a TEM or STEM sample using FIB-SEM, a technique for obtaining a processing end point on the back surface side of the sample. The state of the sample back surface being processed by the FIB is detected using a Kikuchi pattern (116) formed when electrons (107) that have been injected by the SEM are emitted from the sample back surface. Since this Kikuchi pattern is caused by the crystal structure of the sample back surface, the crystal orientation relative to the injected electron beam, and the crystal lattice constants, detecting the pattern allows the processing end point on the back surface side to be obtained during the FIB processing. |
