Semiconductor interconnects and methods for making semiconductor interconnects. An interconnect may include a first via of a first conductive material between a first conductive interconnect layer and a first middle of line (MOL) interconnect layer. The first MOL interconnect layer is on a first level. The first via is fabricated with a single damascene process. Such a semiconductor interconnect also includes a second via of a second conductive material between the first conductive interconnect layer and a second MOL interconnect layer. The second MOL interconnect layer is on a second level. The second via is fabricated with a dual damascene process. The first conductive material is different than the second conductive material.
申请公布号
WO2015171223(A1)
申请公布日期
2015.11.12
申请号
WO2015US24083
申请日期
2015.04.02
申请人
QUALCOMM INCORPORATED
发明人
ZHU, JOHN JIANHONG;XU, JEFFREY JUNHAO;SONG, STANLEY SEUNGCHUL;RIM, KERN;WANG, ZHONGZE