Super Junction Semiconductor Device having Strip Structures in a Cell Area

摘要

A super junction semiconductor device includes a semiconductor portion having strip structures in a cell area. Each strip structure has a compensation structure with first and second sections inversely provided on opposite sides of a fill structure. Each section has first and second compensation layers of complementary conductivity types. The strip structures are linear stripes extending through the cell area in a first lateral direction and into an edge area surrounding the cell area in lateral directions. Each strip structure has an end section with a termination portion in the edge area in which the first compensation layer of the first section is connected with the first compensation layer of the second section via a first conductivity layer, and the second compensation layer of the first section is connected with the second compensation layer of the second section via a second conductivity layer.

主权项

1. A super junction semiconductor device, comprising:
a semiconductor portion comprising strip structures in a cell area, each strip structure comprising a compensation structure that comprises a first and a second section inversely provided on opposite sides of a fill structure, each first and second section comprising a first compensation layer of a first conductivity type and a second compensation layer of a complementary second conductivity type, wherein the strip structures are linear stripes extending through the cell area in a first lateral direction and extending into an edge area surrounding the cell area in lateral directions, each strip structure comprising an end section with a termination portion in the edge area in which the first compensation layer of the first conductivity type of the first section is connected with the first compensation layer of the first conductivity type of the second section via a first conductivity layer, and the second compensation layer of the second conductivity type of the first section is connected with the second compensation layer of the second conductivity type of the second section via a second conductivity layer.