DISPLAY DEVICE

摘要

At least two TFTs which are connected with a light emitting element are provided, crystallinities of semiconductor regions composing active layers of the respective TFTs are made different from each other. As the semiconductor region, a region obtained by crystallizing an amorphous semiconductor film by laser annealing is applied. In order to change the crystallinity, a method of changing a scan direction of a continuous oscillating laser beam so that crystal growth directions are made different from each other is applied. Alternatively, a method of changing a channel length direction of TFT between the respective semiconductor regions without changing the scan direction of the continuous oscillating laser beam so that a crystal growth direction and a current flowing direction are different from each other is applied.

主权项

1. A display device comprising:
a first transistor; a second transistor; a capacitor comprising a first terminal and a second terminal; and a light-emitting element comprising:
a first electrode electrically connected to one of a source and a drain of the first transistor and one of a source and a drain of the second transistor;an organic compound layer over the first electrode; anda second electrode over the organic compound layer, wherein a first crystalline semiconductor layer comprises a channel formation region of the first transistor, a channel formation region of the second transistor, wherein a gate of the first transistor is electrically connected to the second terminal of the capacitor, wherein a channel length direction of the first transistor is perpendicular to a channel length direction of the second transistor, and wherein the first crystalline semiconductor layer is continuous.