SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

In a semiconductor device, a first gate structure is provided in a cell transistor region and includes a floating gate electrode, a first dielectric layer pattern, and a control gate electrode including a first metal silicide pattern. A second gate structure is provided in a selecting transistor region and includes a first conductive layer pattern, a second dielectric layer pattern, and a first gate electrode including a second metal silicide pattern. A third gate structure is provided in a peripheral circuit region and includes a second conductive layer pattern, a third dielectric layer pattern including opening portions on the second conductive layer pattern, and a second gate electrode including a concavo-convex portion at an upper surface portion thereof and a third metal silicide pattern. The third metal silicide pattern has a uniform thickness.

主权项

1. A semiconductor device comprising:
a first structure provided in a cell transistor region of a substrate, the first structure including a floating gate electrode, a first dielectric layer pattern covering a whole upper surface of the floating gate electrode, a control gate electrode on the first dielectric layer pattern, the control gate electrode including a metal; a second structure provided in a selecting transistor region of the substrate, the second structure including a first conductive layer pattern, a second dielectric layer pattern covering a portion of an upper surface of the first conductive layer pattern, and a first electrode, wherein the first electrode includes the metal, and electrically connected to the first conductive layer pattern; and a third structure provided in a peripheral circuit region of the substrate, the third structure including a second conductive layer pattern, a third dielectric layer pattern including a plurality of opening portions on the second conductive layer pattern, and a second electrode including the metal, wherein the second electrode is disposed in respective opening portions and contacts the second conductive layer pattern.