SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.

主权项

1. A semiconductor light emitting element, comprising:
a light reflecting layer; a first light emitting unit including
a first semiconductor layer,a second semiconductor layer provided between the first semiconductor layer and the light reflecting layer, a conductivity type of the second semiconductor layer being different from a conductivity type of the first semiconductor layer,a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first light emitting layer being configured to emit a first light of a first peak wavelength, anda first light transmitting layer provided between the second semiconductor layer and the light reflecting layer, the first light transmitting layer being light-transmissive to the first light; and a second light emitting unit including
a third semiconductor layer provided between the first light transmitting layer and the light reflecting layer,a fourth semiconductor layer provided between the third semiconductor layer and the light reflecting layer, a conductivity type of the fourth semiconductor layer being different from a conductivity type of the third semiconductor layer, anda second light emitting layer provided between the third semiconductor layer and the fourth semiconductor layer, the second light emitting layer being configured to emit a second light of a second peak wavelength different from the first peak wavelength; the light reflecting layer being electrically connected to one selected from the third semiconductor layer and the fourth semiconductor layer, a thickness of the first light transmitting layer being not less than 10 times a distance between the second light emitting layer and the light reflecting layer, wherein the element emits a portion of the first light from a first side surface of the first light transmitting layer, and the first side surface of the first light transmitting layer crosses a plane perpendicular to a direction from the light reflecting layer toward the first semiconductor layer.