Metal Bump Joint Structure and Methods of Forming

摘要

A structure comprises a first semiconductor chip with a first metal bump and a second semiconductor chip with a second metal bump. The structure further comprises a solder joint structure electrically connecting the first semiconductor chip and the second semiconductor chip, wherein the solder joint structure comprises an intermetallic compound region between the first metal bump and the second metal bump, wherein the intermetallic compound region is with a first height dimension and a surrounding portion formed along exterior walls of the first metal bump and the second metal bump, wherein the surrounding portion is with a second height dimension, and wherein the second height dimension is greater than the first height dimension.

主权项

1. A structure comprising:
a first component having a first metal bump on a side of the first component, a first barrier layer being on the first metal bump distal from the first component, the first barrier layer having a different material composition than the first metal bump; a second component having a second metal bump on a side of the second component, a second barrier layer being on the second metal bump distal from the second component, the second barrier layer having a different material composition than the second metal bump; and a joint structure physically and electrically connecting the first metal bump to the second metal bump, the joint structure comprising a surrounding portion around sidewalls of the first metal bump and the second metal bump, the surrounding portion comprising a solder material, the surrounding portion having a first dimension from a point aligned with at least one of sidewalls of the first barrier layer and the second barrier layer to a nearest external surface of the surrounding portion, the first dimension being in a direction perpendicular to the at least one of the sidewalls of the first barrier layer and the second barrier layer, the joint structure further comprising an intermetallic compound between the first barrier layer and the second barrier layer, the intermetallic compound having a material composition including at least one same element of the solder material and at least one same element of at least one of the first barrier layer and the second barrier layer, a second dimension being from the first barrier layer to the second barrier layer, the first dimension being greater than the second dimension.