| 发明名称 |
METHOD OF FORMING POST-PASSIVATION INTERCONNECT STRUCTURE |
| 摘要 |
A method includes coating a passivation layer overlying a semiconductor substrate and forming an interconnect layer overlying the passivation layer. The interconnect layer includes a line region and a landing pad region. The method further includes forming a metallic layer including tin on a surface of the interconnect layer using an immersion process, forming a protective layer on the metallic layer, and exposing a portion of the metallic layer on the landing pad region of the interconnect layer through the protective layer. |
| 申请公布号 |
US2015325539(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
US201514806728 |
申请日期 |
2015.07.23 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WU Yi-Wen;LIM Zheng-Yi;HO Ming-Che;LIU Chung-Shi |
| 分类号 |
H01L23/00;H01L23/31 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method, comprising:
coating a passivation layer overlying a semiconductor substrate; forming an interconnect layer overlying the passivation layer, wherein the interconnect layer comprises a line region and a landing pad region; forming a metallic layer comprising tin on a surface of the interconnect layer using an immersion process; forming a protective layer on the metallic layer; and exposing a portion of the metallic layer on the landing pad region of the interconnect layer through the protective layer. |
| 地址 |
Hsinchu TW |
