SEMICONDUCTOR DEVICE COMPRISING A GRAPHENE WIRE

摘要

According to one embodiment, a semiconductor device includes a catalyst underlying layer formed on a substrate including semiconductor elements formed thereon and processed in a wiring pattern, a catalyst metal layer that is formed on the catalyst underlying layer and whose width is narrower than that of the catalyst underlying layer, and a graphene layer growing with a sidewall of the catalyst metal layer set as a growth origin and formed to surround the catalyst metal layer.

主权项

1. A semiconductor device comprising:
a metal layer provided above a substrate comprising a semiconductor element, the metal layer having a convex shape on a cross-sectional surface and extending in a first longitudinal direction; and a graphene layer provided on the metal layer to surround a side surface and an upper surface of a convex portion of the metal layer, the graphene layer having a curved cross-sectional surface and extending in a second longitudinal direction, wherein the first longitudinal direction of the metal layer conforms to the second longitudinal direction of the graphene layer.