发明名称 |
SEMICONDUCTOR DEVICE HAVING FUSE PATTERN |
摘要 |
A semiconductor device has improved reliability by preventing a fuse cut through a repair process from being electrically reconnected by electrochemical migration. The semiconductor device includes a substrate, a fuse including a first fuse pattern and a second fuse pattern formed at the same level on the substrate, the first fuse pattern and the second fuse pattern being spaced a first width apart from each other such that a gap in the fuse is disposed at a first location between the first fuse pattern and the second fuse pattern, and a first insulation layer formed on the first fuse pattern and the second fuse pattern, the first insulation layer including an opening above the first location and having a second width smaller than the first width. |
申请公布号 |
US2015325518(A1) |
申请公布日期 |
2015.11.12 |
申请号 |
US201514798474 |
申请日期 |
2015.07.14 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
CHO Moon-Gi;AHN Eun-Chul;KIM Sang-Young;SHIN Joo-Weon;LEE Min-Ho |
分类号 |
H01L23/525;H01L23/532;H01L27/112 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-si KR |