发明名称 SEMICONDUCTOR DEVICE HAVING FUSE PATTERN
摘要 A semiconductor device has improved reliability by preventing a fuse cut through a repair process from being electrically reconnected by electrochemical migration. The semiconductor device includes a substrate, a fuse including a first fuse pattern and a second fuse pattern formed at the same level on the substrate, the first fuse pattern and the second fuse pattern being spaced a first width apart from each other such that a gap in the fuse is disposed at a first location between the first fuse pattern and the second fuse pattern, and a first insulation layer formed on the first fuse pattern and the second fuse pattern, the first insulation layer including an opening above the first location and having a second width smaller than the first width.
申请公布号 US2015325518(A1) 申请公布日期 2015.11.12
申请号 US201514798474 申请日期 2015.07.14
申请人 Samsung Electronics Co., Ltd. 发明人 CHO Moon-Gi;AHN Eun-Chul;KIM Sang-Young;SHIN Joo-Weon;LEE Min-Ho
分类号 H01L23/525;H01L23/532;H01L27/112 主分类号 H01L23/525
代理机构 代理人
主权项
地址 Suwon-si KR