发明名称 VIA MATERIAL SELECTION AND PROCESSING
摘要 Semiconductor interconnects and methods for making semiconductor interconnects. An interconnect may include a first via of a first conductive material between a first conductive interconnect layer and a first middle of line (MOL) interconnect layer. The first MOL interconnect layer is on a first level. The first via is fabricated with a single damascene process. Such a semiconductor interconnect also includes a second via of a second conductive material between the first conductive interconnect layer and a second MOL interconnect layer. The second MOL interconnect layer is on a second level. The second via is fabricated with a dual damascene process. The first conductive material is different than the second conductive material.
申请公布号 US2015325515(A1) 申请公布日期 2015.11.12
申请号 US201414274470 申请日期 2014.05.09
申请人 QUALCOMM Incorporated 发明人 ZHU John Jianhong;XU Jeffrey Junhao;SONG Stanley Seungchul;RIM Kern;WANG Zhongze
分类号 H01L23/522;H01L21/768;H01L23/532 主分类号 H01L23/522
代理机构 代理人
主权项 1. A semiconductor interconnect, comprising: a first via of a first conductive material between a first conductive interconnect layer and at least a first middle of line (MOL) interconnect layer on a first level fabricated with a single damascene process; a second via of a second conductive material between the first conductive interconnect layer and at least a second MOL interconnect layer on a second level fabricated with a dual damascene process, the first conductive material differing from the second conductive material; and a circuit coupled to one of the first MOL interconnect layer and the second MOL interconnect layer, the first MOL interconnect layer and the second MOL interconnect layer disposed between the circuit and the first conductive interconnect layer.
地址 San Diego CA US