INTEGRATED CIRCUITS HAVING IMPROVED GATE STRUCTURES AND METHODS FOR FABRICATING SAME

摘要

Integrated circuits with improved gate structures and methods for fabricating integrated circuits with improved gate structures are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate with fin structures. A gate-forming material is deposited over the semiconductor substrate and fin structures. The method includes performing a first etch process to etch the gate-forming material to form a gate line having a first side and a second side. The first side and second side of the gate line are bounded with material. The method includes performing a second etch process to etch a portion of the gate line bound by the material to separate the gate line into adjacent gate structures and to define a tip-to-tip distance between the adjacent gate structures.

主权项

1. A method for fabricating an integrated circuit, the method comprising;
providing a semiconductor substrate with fin structures; depositing a gate-forming material over the semiconductor substrate and fin structures; performing a first etch process to etch the gate-forming material to form a gate line having a first side and a second side; bounding the first side and second side of the gate line with material; performing a second etch process to remove a portion of the gate line bounded by the material to separate the gate line into adjacent gate structures and to define a tip-to-tip distance between the adjacent gate structures.