发明名称 ETCHING CHAMBER AND METHOD OF MANUFACTURING SUBSTRATE
摘要 An etching chamber includes a chamber body including a flow channel and an opening mounted the substrate to be etched and the opening communicating with the flow channel and a sealing member provided in the periphery of the opening and configured to close a gap between the substrate and the chamber body when the substrate is mounted in the opening, wherein the sealing member includes a first groove provided on an upper surface of the sealing member which comes into abutment with the substrate when the substrate is mounted in the opening, a second groove provided on a sealing member bottom surface on a side opposite from the upper surface of the sealing member, and at least one communicating hole communicating with the first groove and the second groove.
申请公布号 US2015325460(A1) 申请公布日期 2015.11.12
申请号 US201514706836 申请日期 2015.05.07
申请人 CANON KABUSHIKI KAISHA 发明人 Furusawa Kenta;Koyama Shuji;Chida Mitsuru;Murakami Ryotaro
分类号 H01L21/67;H01L21/683;H01L21/306 主分类号 H01L21/67
代理机构 代理人
主权项 1. An etching chamber comprising: a chamber body including a flow channel and an opening which communicates with the flow channel and on which a substrate to be etched is mounted, and a sealing member provided in a periphery of the opening and configured to close a gap between the substrate and the chamber body when the substrate is mounted in the opening, wherein the sealing member includes; a first groove provided on an upper surface of the sealing member which comes into abutment with the substrate when the substrate is mounted in the opening, a second groove provided on a sealing member bottom surface on a side opposite to an upper surface of the sealing member, and at least one communication hole configured to enable the first groove and the second groove to communicate with each other.
地址 Tokyo JP