| 发明名称 |
METHOD FOR CLEANING BASE, HEAT PROCESS METHOD FOR SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE CAPTURING APPARATUS |
| 摘要 |
A method for cleaning a base for supporting an object to process in an apparatus configured to perform a heat process, the method comprising a first step of forming an oxide film on the base including silicon carbide, by subjecting the base to a heat process in a gas atmosphere including oxygen, and a second step of, after the first step, subjecting the base to a heat process in a gas atmosphere including steam, wherein the first step is performed for 10 hours at a temperature of 1000° C. or more. |
| 申请公布号 |
US2015325456(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
US201514701122 |
申请日期 |
2015.04.30 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
Ogawa Toshiyuki;Ukigaya Nobutaka |
| 分类号 |
H01L21/477;B08B7/00;H01L21/02 |
主分类号 |
H01L21/477 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for cleaning a base for supporting an object to process in an apparatus configured to perform a heat process, the method comprising:
a first step of forming an oxide film on the base including silicon carbide, by subjecting the base to a heat process in a gas atmosphere including oxygen; and a second step of, after the first step, subjecting the base to a heat process in a gas atmosphere including steam, wherein the first step is performed for 10 hours at a temperature of 1000° C. or more. |
| 地址 |
Tokyo JP |
