发明名称 Method and System for Inspecting an EUV Mask
摘要 A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.
申请公布号 US2015325402(A1) 申请公布日期 2015.11.12
申请号 US201514796565 申请日期 2015.07.10
申请人 Hermes Microvision Inc. 发明人 Weng Guochong;Wang Youjin;Kuan Chiyan;Pan Chung-Shih
分类号 H01J37/02;H01J37/28 主分类号 H01J37/02
代理机构 代理人
主权项 1. A system for grounding an EUV mask when the EUV mask is inspected by using a charged particle beam, comprising: means for conducting charges from a reflective surface of the EUV mask, said conducting means being mounted on the EUV mask, wherein said charges are induced by using said charged particle beam; and means for grounding said charges by directly contacting said conducting means.
地址 Hsinchu City TW