发明名称 |
FINFET AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A FinFET and a method for manufacturing the same are provided. The method includes: patterning a semiconductor substrate to form a ridge; performing ion implantation such that a doped punch-through-stopper layer is formed in the ridge and a semiconductor fin is formed by a portion of the semiconductor substrate disposed above the doped punch-through-stopper layer; forming a gate stack intersecting the semiconductor fin, the gate stack comprising a gate conductor and a gate dielectric isolating the gate conductor from the semiconductor fin; forming a gate spacer surrounding the gate conductor; and forming source and drain regions in portions of the semiconductor fin at opposite sides of the gate stack. |
申请公布号 |
US2015325699(A1) |
申请公布日期 |
2015.11.12 |
申请号 |
US201214647736 |
申请日期 |
2012.12.07 |
申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
发明人 |
Zhu Huilong;Xu Miao |
分类号 |
H01L29/78;H01L29/10;H01L21/308;H01L21/265;H01L21/311;H01L21/02;H01L29/165;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a FinFET, comprising the steps of:
patterning a semiconductor substrate to form a ridge; performing ion implantation such that a doped punch-through-stopper layer is formed in the ridge and a semiconductor fin is formed by a portion of the semiconductor substrate disposed above the doped punch-through-stopper layer; forming a gate stack intersecting the semiconductor fin, the gate stack comprising a gate conductor and a gate dielectric isolating the gate conductor from the semiconductor fin; forming a gate spacer surrounding the gate conductor; and forming source and drain regions in portions of the semiconductor fin at opposite sides of the gate stack. |
地址 |
Beijing CN |