SEMICONDUCTOR DEVICE

摘要

In a semiconductor device provided with a MOSFET part and a gate pad part defined on a semiconductor substrate which is formed by laminating a low resistance semiconductor layer and a drift layer, the gate pad part includes: the low resistance semiconductor layer; the drift layer formed on the low resistance semiconductor layer; a poly-silicon layer constituting a conductor layer and a gate pad electrode formed above the drift layer over the whole area of the gate pad part with a field insulation layer interposed therebetween; and a gate oscillation suppressing structure where a p-type diffusion region electrically connected with the a source electrode layer and a p-type impurity non-diffusion region are alternately formed on a surface of the drift layer.

主权项

1. A semiconductor device provided with an active element part and a gate pad part defined on a semiconductor substrate which is formed by laminating a low resistance semiconductor layer of a first conductive type or a second conductive type and a drift layer of a first conductive type to each other, wherein
the active element part includes: the low resistance semiconductor layer; the drift layer formed on the low resistance semiconductor layer; a base region of a second conductive type formed on a surface of the drift layer; a high concentration impurity diffusion region of a first conductive type formed on a surface of the base region; a gate electrode layer formed on the base region sandwiched between the high concentration impurity diffusion region and the drift layer with a gate insulation layer interposed therebetween; and a first electrode layer formed in contact with a surface of the high concentration impurity diffusion region and a surface of the base region in a state where the first electrode layer is insulated from the gate electrode layer with an interlayer insulation layer interposed therebetween, and the gate pad part includes: the low resistance semiconductor layer; the drift layer formed on the low resistance semiconductor layer; a conductor layer formed above the drift layer over the whole area of the gate pad part with a field insulation layer having a thickness of 200 nm to 500 nm interposed therebetween; and a gate oscillation suppressing structure where an impurity diffusion region of a second conductive type electrically connected with the first electrode layer and an impurity non-diffusion region of a second conductive type are alternately formed on a surface of the drift layer.