SEMI-FLOATING-GATE DEVICE AND ITS MANUFACTURING METHOD

摘要

The disclosure, belonging to the technological field of semiconductor memory, specifically relates to a semi-floating-gate device which comprises at least a semiconductor substrate, a source region, a drain region, a floating gate, a control gate, a perpendicular channel region and a gated p-n junction diode used to connect the floating gate and the substrate. The semi-floating-gate device disclosed in the disclosure using the floating gate to store information and realizing charging or discharging of the floating gate through a gated p-n junction diode boasts small unit area, high chip density, low operating voltage in data storage and strong ability in data retain.

主权项

1. A semi-floating-gate device, wherein comprising:
a semiconductor substrate with the first doping type; a perpendicular channel region formed in the semiconductor substrate; the bottom of the perpendicular channel region is connected with a source region with the second doping type, and the top of the perpendicular channel region is connected with a drain region with the second doping type; a first layer of insulation film formed due to covering the source region, the drain region and the perpendicular channel region; a floating gate opening region formed in the first layer of insulation film which covers the perpendicular channel region and lies above the semiconductor substrate; a floating gate with the first doping type which covers the first layer of the insulation film and the floating gate opening region, and the floating gate is used as the charge storage node; and through the floating gate opening region a p-n junction diode formed between floating gate and the drain region; and the floating gate covers the first layer of the insulation film of the perpendicular channel region, controlling the current of the perpendicular channel region by controlling the electric field; a second layer of insulation film formed due to covering the source region, the floating gate and the p-n junction diode; a control gate which lies above the second layer of insulation film formed due to covering the floating gate and the p-n junction diode.