发明名称 METHOD FOR CONTROLLING MAGNETIC PROPERTIES THROUGH ION DIFFUSION IN A MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS
摘要 A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. The method includes providing a reference layer, a nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer is between the free and reference layers. An interface is between the nonmagnetic spacer and free layers. Providing the free layer further includes applying at least one electric field while the free layer is at a local temperature above an operating temperature of the magnetic junction. The electric field(s) exert a force on an anion in the free layer in a direction away from the interface between the free layer and the nonmagnetic spacer layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
申请公布号 US2015325623(A1) 申请公布日期 2015.11.12
申请号 US201514704341 申请日期 2015.05.05
申请人 Samsung Electronics Co., Ltd. 发明人 Chepulskyy Roman;Apalkov Dmytro
分类号 H01L27/22;H01L43/08;H01L43/12;H01L43/02 主分类号 H01L27/22
代理机构 代理人
主权项 1. A method for providing a magnetic junction on a substrate usable in a magnetic device, the method comprising: providing a reference layer; providing a nonmagnetic spacer layer; providing a free layer, the nonmagnetic spacer layer being between the free layer and the reference layer, an interface being between the nonmagnetic spacer layer and the free layer, the step of providing the free layer further including applying at least one electric field while the free layer is at a local temperature above an operating temperature of the magnetic junction, the at least one electric field exerting a force on an anion in the free layer in a direction away from the interface between the free layer and the nonmagnetic spacer layer; wherein the magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
地址 Gyeonggi-do KR