Structure And Method For A High-K Transformer With Capacitive Coupling

摘要

The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate having an integrated circuit (IC) device; an interconnect structure disposed on the semiconductor substrate and coupled with the IC device; and a transformer disposed on the semiconductor substrate and integrated in the interconnect structure. The transformer includes a first conductive feature; a second conductive feature inductively coupled with the first conductive feature; a third conductive feature electrically connected to the first conductive feature; and a fourth conductive feature electrically connected to the second conductive feature. The third and fourth conductive features are designed and configured to be capacitively coupled to increase a coupling coefficient of the transformer.

主权项

1. A method comprising:
forming a first conductive feature having first two ports over a semiconductor substrate; forming a second conductive feature having second two ports over the semiconductor substrate, wherein the first and second conductive features are inductively coupled; and forming a third conductive feature over the semiconductor substrate, the third conductive feature being electrically coupled to at least one of the first and second conductive features and having an end that is electrically floating, the third conductive feature being capacitively coupled with at least one of the first and second conductive features.