| 发明名称 |
METHOD FOR PREPARING MATERIAL ON INSULATOR BASED ON ENHANCED ADSORPTION |
| 摘要 |
Provided is a method for preparing a material on an insulator based on enhanced adsorption. In the method: first, a single crystal film having a doped superlattice structure, an intermediate layer, a buffer layer and a top layer film are epitaxially grown in succession on a first substrate; then, low dosage ion implantation is performed on the structure on which the top layer film is formed, so that ions are implanted above an upper surface or below a lower surface of the single crystal film having a doped superlattice structure; next, a second substrate having an insulation layer is bonded to the structure on which ion implantation has already been performed, and an annealing treatment is performed, so that a microscopic crack is produced at the single crystal film having a doped superlattice structure to achieve atomic-scale stripping. The effective stripping of bonding wafers is achieved by means of enhanced adsorption. The stripped surface is smooth and has a low roughness, and the quality of the crystal of the top layer film is high. |
| 申请公布号 |
US2015325468(A1) |
申请公布日期 |
2015.11.12 |
| 申请号 |
US201314402213 |
申请日期 |
2013.03.21 |
| 申请人 |
SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES |
发明人 |
ZHANG Miao;CHEN Da;DI Zengfeng;XUE Zhongying;WEI Xing;WANG Gang |
| 分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for preparing a material on an insulator based on enhanced adsorption, characterized in that, the method for preparing a material on an insulator based on enhanced adsorption at least comprise steps:
a) a single crystal film having a doped superlattice structure, an intermediate layer, a buffer layer and a top layer film are epitaxially grown in succession on a first substrate; b) low dosage ion implantation is performed on the structure on which the top layer film is formed, so that ions are implanted above an upper surface or below a lower surface of the single crystal film having a doped superlattice structure; c) a second substrate having an insulation layer is bonded to the structure on which ion implantation has already been performed, and an annealing treatment is performed, so that a microscopic crack is produced at the single crystal film having a doped superlattice structure to achieve atomic-scale stripping. |
| 地址 |
Shanghai CN |
