发明名称 HIGH QUALITY SAPPHIRE SUBSTRATES AND METHOD OF MAKING SAID SAPPHIRE SUBSTRATES
摘要 Sapphire substrates suitable for semiconductor manufacturing characterized by a superior dimensional and shape qualities. The sapphire substrates are specifically characterized by having a very low local and gobal flatness (SFQR and GFLR) and a low roll-off amount (ROA). A time efficient method of making sapphire substrates having a very low SFQR, GFLR and ROA.
申请公布号 WO2015172014(A1) 申请公布日期 2015.11.12
申请号 WO2015US29875 申请日期 2015.05.08
申请人 SAINT-GOBAIN CERAMICS & PLASTICS, INC. 发明人 BROSNAN, MAUREEN A.;DOLUKHANYAN, TIGRAN;JONES, CHRISTOPHER D.;PAPOYAN, HAYKAZ GAREGIN;VEDANTHAM, RAMANUJAM
分类号 H01L21/86 主分类号 H01L21/86
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