HIGH QUALITY SAPPHIRE SUBSTRATES AND METHOD OF MAKING SAID SAPPHIRE SUBSTRATES
摘要
Sapphire substrates suitable for semiconductor manufacturing characterized by a superior dimensional and shape qualities. The sapphire substrates are specifically characterized by having a very low local and gobal flatness (SFQR and GFLR) and a low roll-off amount (ROA). A time efficient method of making sapphire substrates having a very low SFQR, GFLR and ROA.
申请公布号
WO2015172014(A1)
申请公布日期
2015.11.12
申请号
WO2015US29875
申请日期
2015.05.08
申请人
SAINT-GOBAIN CERAMICS & PLASTICS, INC.
发明人
BROSNAN, MAUREEN A.;DOLUKHANYAN, TIGRAN;JONES, CHRISTOPHER D.;PAPOYAN, HAYKAZ GAREGIN;VEDANTHAM, RAMANUJAM