| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for plasma etching for improving etching of lithographic photomasks, or reticles.SOLUTION: A process chamber 102 includes a substrate support pedestal 124 adapted to support a photomask substrate. A plasma power source 112 is coupled to the process chamber to form a plasma. An ion-radical shield 170 is disposed above the substrate support pedestal 124. The ion-radical shield includes a substantially flat member electrically isolated from the chamber walls, and a plurality of apertures that vertically extend through the flat member, and is adapted to control the spatial distribution of charged and neutral species of the plasma. |
