发明名称 LOW NOISE AMPLIFIER DRAIN SWITCH CIRCUIT
摘要 PROBLEM TO BE SOLVED: To prevent a signal from feeding back through a receive path.SOLUTION: A low noise amplifier (LNA) drain switch circuit 200 includes a first field effect transistor (FET) 205. A drain contact 215 of the first FET is coupled with a gate contact 240 of a second FET 235. A drain contact 250 of the second FET is coupled with the gate of the second FET through a resistor 260. A source contact 245 of the second FET is coupled with a diode 265 which is coupled with an LNA 275.
申请公布号 JP2015201841(A) 申请公布日期 2015.11.12
申请号 JP20150055719 申请日期 2015.03.19
申请人 TRIQUINT SEMICONDUCTOR INC 发明人 CHARLES F CAMPBELL
分类号 H03F3/24;H03K17/04 主分类号 H03F3/24
代理机构 代理人
主权项
地址