HIGH DENSITY SRAM ARRAY DESIGN WITH WORD LINE LANDING PADS EXTENDING OVER THE CELL BOUNDARY IN THE ROW DIRECTION

摘要

A static random access memory (SRAM) cell (340) includes a first conductive layer (M1) including a wordline landing pad (320) extending into a neighboring memory cell (360) in an adjacent row of a memory array. The wordline landing pad in the first conductive layer is electrically isolated from all gate contacts of the neighboring memory cell. The SRAM cell also includes a second conductive layer including a wordline (WL1) coupled to the wordline landing pad in the first conductive layer. The SRAM cell further includes a first via (Via0) coupling a gate contact of a pass transistor gate in the SRAM cell to the wordline landing pad in the first conductive layer and a second via (Via1) coupling the wordline landing pad and the wordline of the second conductive layer.