发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING FIN RELAXATION, AND RELATED STRUCTURES |
摘要 |
Methods of fabricating semiconductor structures involve the formation of fins for finFET transistors having different stress/strain states. Fins of one stress/strain state may be employed to form n-type finFETS, while fins of another stress/strain state may be employed to form p-type finFETs. The fins having different stress/strain states may be fabricated from a common layer of semiconductor material. Semiconductor structures and devices are fabricated using such methods. |
申请公布号 |
WO2015171362(A1) |
申请公布日期 |
2015.11.12 |
申请号 |
WO2015US27974 |
申请日期 |
2015.04.28 |
申请人 |
SOITEC;STMICROELECTRONICS, INC. |
发明人 |
ALLIBERT, FREDERIC;MORIN, PIERRE |
分类号 |
H01L21/84 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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