| 摘要 |
PROBLEM TO BE SOLVED: To provide overcurrent protection means for a power semiconductor element.SOLUTION: Provided is a drive device for driving a power semiconductor element, such as an IGBT, in which a main current Ic flows between a collector terminal C and an emitter terminal E by being applied with a voltage at a gate terminal G, and a detection current proportional to the main current flow in a sense terminal S. The drive device performs an operation for protecting the IGBT from an overcurrent by using the detection current. The drive device comprises a gate voltage reduction circuit 320 for controlling a magnitude of the voltage applied to the gate terminal. This gate voltage reduction circuit, in a case where the detection current becomes larger than a first current threshold, reduces the voltage to be applied to the gate terminal according to a first time change rate, and in a case where the detection current becomes smaller than the first current threshold, increases the voltage to be applied to the gate terminal to a voltage value applied to the gate terminal at a normal state of the IGBT according to a second time change rate lower than the first time change rate. |
