发明名称 METHOD OF INTRODUCING DOPANT TO GROUP 13 NITRIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method of surely introducing a dopant to a predetermined group 13 nitride single crystal using a simple method.SOLUTION: A method of introducing a dopant to a group 13 nitride single crystal includes: a heating process in which the group 13 nitride single crystal, and both of a solid dopant source metal and a metal Ga are filled to a crucible, and the filling is heated to provide a mixed melt in which the group 13 nitride single crystal is immersed; and a melt annealing process in which the group 13 nitride single crystal is maintained to be immersed in the mixed melt obtained in the heating process to diffuse the dopant to the group 13 nitride single crystal from the mixed melt to introduce the dopant to the group 13 nitride single crystal.
申请公布号 JP2015199651(A) 申请公布日期 2015.11.12
申请号 JP20150070579 申请日期 2015.03.31
申请人 NGK INSULATORS LTD 发明人 ICHIMURA MIKIYA;KURAOKA YOSHITAKA
分类号 C30B29/38;C30B33/00;H01L21/205;H01L21/225 主分类号 C30B29/38
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