| 摘要 |
Disclosed in the present invention is a novel etching solution used in an oxide material system. The novel etching solution comprises an oxide etching solution, an adjusting agent having the effect of adjusting thickness, and water. At the same time, also disclosed in the present invention are an etching method and an application of the novel etching solution. The novel etching solution and the etching method disclosed in the present invention are generally suitable for etching oxide thin film materials based on Sn, Zn, Al, Ga and In and alloy thereof, especially suitable for etching oxide materials of ZnO, AZO, GZO, IGZO, IZO, etc., and can also be widely used for etching oxide materials for making fine electronic components, such as semiconductor photoelectric devices, solar cells, TFT film transistors, semiconductor integrated circuits and transparent electrodes, etc. Compared with traditional etching solutions, the novel etching solution of the present invention has the effects of lateral etching inhibition, uneven etching prevention and etching residual prevention. |
