RESISTIVE CHANGE DEVICE AND METHOD OF FABRICATING THE SAME

摘要

According to one embodiment, a resistive change device comprises: a lower electrode layer; and a conductive oxide layer in which oxygen can move wherein the conductive oxide layer is arranged on the lower electrode layer. In addition, the resistive change device is arranged on an interface between the lower electrode layer and the conductive oxide layer. The resistive change device consists of the same constitution elements as the conductive oxide layer. The resistive change device comprises a variable resistive layer wherein oxygen concentration of the variable resistive layer is higher than oxygen concentration of conductive oxide layer.