| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of easily evaluating the eccentricity of a placing position of a substrate in a high-temperature state at epitaxial growth.SOLUTION: A substrate is placed at a pocket part of a susceptor, and an epitaxial growth layer is grown on the substrate (S2), and surface curvature distribution in a circumferential direction at an outer peripheral part of the grown epitaxial layer is measured (S3). Filter processing is performed to the measured surface curvature distribution to remove a short period component caused by facet growth from the surface curvature distribution (S4). An angle D of the outer peripheral part that is the minimum value of the surface curvature distribution after removing the short period component (a long period component) is calculated as an eccentric direction of the substrate (S5). A deviation &Dgr;D from an average value, of the surface curvature at the angle D is calculated (S6). On the basis a relation between the deviation &Dgr;D and an eccentric amount of the substrate preliminarily calculated at S1, the deviation &Dgr;D calculated at S5 is converted into the eccentric amount (S7). A placing position of the substrate is corrected on the basis of the calculated eccentric amount and the eccentric direction. |
