| 摘要 |
PROBLEM TO BE SOLVED: To provide an arrangement for performing pressure control in a plasma processing chamber.SOLUTION: The arrangement comprises an upper electrode 206, a lower electrode, a unitized confinement ring arrangement 202. The upper electrode, the lower electrode and the unitized confinement ring arrangement are configured at least for surrounding a confined chamber region 204 to facilitate plasma generation and confinement in the region. The arrangement further includes at least one plunger 222 configured for moving the unitized confinement ring arrangement in a vertical direction to adjust at least one of a first gas conductance path upper conductance path and a second gas conductance path (lower conductance path) to perform the pressure control, where the first gas conductance path 212 is formed between the upper electrode and the unitized confinement ring arrangement and the second gas conductance path 214 is formed between the lower electrode and the single unitized ring arrangement. |
