发明名称 SUPERLATTICE STRUCTURE, MANUFACTURING METHOD THEREFOR, AND ELECTRODE MATERIAL USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a superlattice structure which is suitable for a super capacitor, a pseudo capacitance capacitor or the like, and also to provide a manufacturing method therefor, and an electrode material using the same.SOLUTION: Disclosed is a superlattice structure in which a double hydroxide nanosheet containing M1ion and M2ion, and the reduced graphene oxide nanosheet are alternately laminated on each other. M1 element of M1ion is a metal element of at least one selected from the group consisting of Co, Fe, Ni, Mn, Cu, and Zn. M2 element of M2ion is a metal element of at least one selected from the group consisting of Al, Cr, Mn, Fe, Co, Ni and Ca. The interlayer distance is within a range of 0.8 nm or more and less than 1.3 nm.
申请公布号 JP2015201483(A) 申请公布日期 2015.11.12
申请号 JP20140077997 申请日期 2014.04.04
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 BA HITOSHI;SASAKI TAKAYOSHI;BANDO YOSHIO
分类号 H01G11/30;B32B9/00;B82Y30/00;B82Y40/00;C01G51/00;C01G53/00;H01G11/32 主分类号 H01G11/30
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