发明名称 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing method and a plasma processing apparatus, which can achieve improvement of manufacturing efficiency and reduction in a manufacturing cost compared with a conventional case.SOLUTION: In a plasma processing method, by energizing coils 61-64 to generate magnetic field by using a plasma processing apparatus 10 comprising an electric magnet 30 which is arranged above a processing chamber 12, and arranged to be located outside a periphery of a processed substrate (semiconductor wafer) W and has the annular coils 61-64, an interface of plasma sheath formed above a processed substrate W and above a focus ring 26 is planarized.
申请公布号 JP2015201558(A) 申请公布日期 2015.11.12
申请号 JP20140080039 申请日期 2014.04.09
申请人 TOKYO ELECTRON LTD;TOSHIBA CORP 发明人 YASUDA KENTA;KUBOTA TORU;KONDO TAKASHI;ISHIDA KATSUHIRO
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
代理机构 代理人
主权项
地址
您可能感兴趣的专利