发明名称 |
PROCESSING LIQUID FOR ELECTRONIC COMPONENT AND MANUFACTURING METHOD OF ELECTRONIC COMPONENT |
摘要 |
PROBLEM TO BE SOLVED: To provide solution capable of selectively protecting a nitrogen-containing Si and etching oxygen-carbon-containing Si, and to provide a manufacturing method of an electronic component using the solution.SOLUTION: The problem is solved by following solution represented by a following formula (R represents an alkyl group or the like, X represents anion, and n>2). |
申请公布号 |
JP2015201630(A) |
申请公布日期 |
2015.11.12 |
申请号 |
JP20150066171 |
申请日期 |
2015.03.27 |
申请人 |
FINE POLYMERS KK |
发明人 |
KATO TOSHITADA;SATO NAOYA;KAMON SHIGERU;OGATA KOICHIRO |
分类号 |
H01L21/308;C11D1/02;C11D3/04;C11D3/20;C11D3/28;C11D3/34;C11D3/36;C11D3/43;H01L21/304 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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