| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a novel structure.SOLUTION: A semiconductor device includes: a first transistor having a channel formation region provided in a substrate including a semiconductor material, impurity regions provided so as to sandwich the channel formation region, a first gate insulating layer on the channel formation region, a first gate electrode on the first gate insulating layer, and a first source electrode and a first drain electrode electrically connected to the impurity regions; and a second transistor having a second gate electrode on the substrate containing the semiconductor material, a second gate insulating layer on the second gate electrode, an oxide semiconductor layer on the second gate insulating layer, and a second source electrode and a second drain electrode electrically connected to the oxide semiconductor layer. |
