发明名称 CLEANING FLUID FOR LITHOGRAPHY AND ETCHING WORKING METHOD FOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a cleaning fluid for a lithography having an excellent corrosion suppression function on metal of at least one kind selected from the group consisting of tungsten, cobalt, copper, and alloy consisting of any of these metals, and also to an etching working method for a substrate using this cleaning fluid for the lithography.SOLUTION: A cleaning fluid for a lithography includes: a basic compound; a water-soluble organic solvent; water; and a polyvalent mercaptan compound whose Log P is 0.5 or less. Preferably, the cleaning fluid for the lithography includes a metal region composed of metal of at least one kind selected the group consisting of tungsten, cobalt, copper, and alloy consisting of any of these metals, and at least a part of this metal region is used for cleaning of a substrate exposed to the surface.
申请公布号 JP2015201484(A) 申请公布日期 2015.11.12
申请号 JP20140078034 申请日期 2014.04.04
申请人 TOKYO OHKA KOGYO CO LTD 发明人 HARAGUCHI TAKAYUKI;KUMAGAI TOMOYA;UENO NAOHISA
分类号 H01L21/304;C11D7/32;C11D7/34;C11D7/50;C23F4/00;C23G1/18;C23G1/20;C23G5/032;G03F7/32 主分类号 H01L21/304
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